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| FHX76LP Super Low Noise HEMT FEATURES * Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz * High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz * High Reliability * Small Size SMT Package * Tape and Reel Packaging Available DESCRIPTION The FHX76LP is a low noise SuperHEMT product designed for DBS applications. This device uses a small ceramic package that is optimized for high volume cost driven requirements. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000. 3. The operating channel temperature (Tch) should not exceed 80C. TM Symbol VDS VGS Pt TSTG TCH Condition Rating 3.5 -3.0 Unit V V mW C C Note 180 -65 to 150 150 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Noise Figure Associated Gain Thermal Resistance CASE STYLES: LP Note: RF parameters for LP devices are measured on a sample basis as follows: Lot qty. or to to or Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) Symbol IDSS gm Vp VGSO NF Gas Rth Conditions VDS = 2V, VGS=0V VDS = 2V, IDS=10mA VDS = 2V, IDS=1mA IGS = -10A VDS = 2V, IDS = 10mA, f=12GHz Channel to Case Min. 10 35 -0.1 -3.0 12.0 - Limits Typ. Max. 30 50 -0.7 0.40 13.5 300 60 -1.5 0.50 400 Unit mA mS V V dB dB C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 August 2004 1 FHX76LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 VGS =0V 100 Drain Current (mA) 150 30 20 -0.2V 10 -0.4V -0.6V -0.8V 1 2 3 Drain-Source Voltage (V) 50 0 0 50 100 150 200 0 4 Ambient Temperature (C) NF & Gas vs. FREQUENCY 1.2 1.0 Noise Figure (dB) 0.8 0.6 0.4 0.2 0.0 2 4 8 10 20 Frequency (GHz) VDS=2V IDS=10mA Gas 18 15 12 9 6 0 24 21 Associated Gain (dB) Noise Figure (dB) 1.5 2.0 NF & Gas vs. IDS 15 VDS=2V f=12GHz Associated Gain (dB) Gas 13 1.0 11 NF 0.5 NF 9 7 10 20 30 Drain Current (mA) 2 FHX76LP Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 1.0 +j10 1.5 2.0 3.0dB +j250 opt 0 10 25 0.5 50 100 250 f=12GHz VDS=2V IDS=10mA opt=0.32153.8 Rn/50=0.06 NFmin=0.40dB -j10 -j250 -j25 -j50 -j100 NOISE PARAMETERS VDS=2V, IDS=10MA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 opt (MAG) (ANG) 0.79 0.62 0.50 0.41 0.35 0.32 0.30 0.29 0.29 0.29 12.5 30.0 54.1 83.6 117.3 153.8 -168.0 -129.5 -91.8 -56.3 NFmin (dB) 0.28 0.29 0.30 0.32 0.35 0.40 0.48 0.60 0.72 0.91 Ga(max) AND |S21| vs. FREQUENCY 25 Rn/50 .24 .20 .16 .12 .08 .06 .06 .09 .14 .19 20 Ga(max) VDS=2V IDS=10mA Gain (dB) 15 |S21|2 10 5 0 4 6 8 10 12 20 Frequency (GHz) 3 FHX76LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 VGS =0V 100 Drain Current (mA) 150 30 20 -0.2V 10 -0.4V -0.6V -0.8V 1 2 3 Drain-Source Voltage (V) 50 0 0 50 100 150 200 0 4 Ambient Temperature (C) FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 S11 MAG .987 .965 .925 .878 .828 .776 .719 .669 .631 .590 .548 .507 .482 .459 .439 .419 .404 .383 .377 .348 ANG -14.8 -29.4 -44.6 -58.3 -72.9 -87.8 -102.8 -116.6 -129.4 -141.7 -155.3 -169.6 177.0 164.7 152.3 138.7 123.9 107.3 93.2 76.5 S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG 5.535 5.463 5.334 5.154 5.019 4.825 4.606 4.354 4.130 3.982 3.849 3.689 3.545 3.425 3.330 3.264 3.238 3.176 3.101 3.028 164.2 148.8 133.2 118.8 104.3 89.8 75.6 61.9 49.5 37.0 24.7 12.4 -.2 -11.9 -24.4 -37.1 -50.3 -63.5 -78.0 -92.3 .014 .027 .041 .049 .059 .067 .075 .079 .083 .086 .088 .091 .095 .096 .098 .102 .103 .108 .105 .110 80.2 70.2 57.7 50.0 40.6 32.4 23.2 15.2 6.3 .2 -7.6 -14.2 -20.8 -28.7 -36.4 -44.1 -54.6 -63.4 -74.5 -87.6 S22 MAG .585 .567 .538 .511 .480 .446 .413 .394 .374 .365 .335 .323 .313 .315 .324 .322 .321 .316 .320 .301 ANG -11.4 -22.9 -34.7 -45.2 -56.4 -68.4 -80.6 -92.6 -102.4 -112.5 -121.9 -134.1 -145.0 -155.9 -165.4 -174.3 175.4 165.3 153.2 146.1 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.1mm length, 25m Dia Au wire) Drain n=1 (0.1mm length, 25m Dia Au wire) Source n=4 (0.2mm length, 25m Dia Au wire) 4 FHX76LP Super Low Noise HEMT Case Style "LP" Metal-Ceramic Package 4.780.5 (0.188) 1.5 0.5 1.78+0.15 1.5 0.5 (0.07) (0.059) (0.059) 1 1.780.15 (0.07) 1.5 0.5 1.78+0.15 1.5 0.5 (0.059) (0.07) (0.059) 4 3 0.5 (0.02) 1.780.15 (0.07) 2 1.3 Max (0.051) For further information please contact: 0.1 (0.004) 1: Gate 2: Source (Flange) 3: Drain 4: Source (Flange) Unit: mm (Inches) 4.780.5 (0.188) 1.0 Min (0.039) CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 5 |
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